简介：2007年本科毕业于山东大学微电子学专业，获理学学士学位；2012年博士毕业于中国科学院研究生院（半导体研究所）微电子学与固体电子学专业，获工学博士学位。2012年7月起任教于华侨大学信息科学与工程学院；2012年7月至2015年12月任讲师，2016年起任副教授；2015年3月起任硕士生导师，招收光学工程（学硕）和电子信息（专硕）研究生。
讲授课程：大学物理，半导体器件基础
研究领域：半导体材料与器件
科研项目：主持国家自然科学基金青年项目1项（已结题），福建省自然科学基金青年项目1项（已结题），参与国家自然科学基金面上项目3项和青年项目1项，参与省市和横向项目多项。
学术发表：在国内外期刊和会议上署名发表论文约60篇，Google Scholar统计被引次数超1300次，h指数17，其中代表性论著如下：
(1) Z. Li, Z. He, L. Zhuo,S. Su*, Z. Lin, W. Qiu*, B. Huang, Q. Kan, “ Investigation of three topological edge states in honeycomb attices based on graphene plasmonic crystal,”J. Phys. D: Appl. Phys., vol. 55, pp. 275102, 2022.
(2) H. Zhou,S. Su*, H. Ma, Z. Zhao, Z. Lin, W. Qiu*, P. Qiu, B. Huang, Q. Kan, “Chiral graphene plasmonic Archimedes’ spiral nanostructure with tunable circular dichroism and enhanced sensing performance,”Optics Express, vol. 28, no.21, pp. 31954, 2020.
(3) S. Su, D. Zhang, C. Xue, B. Cheng, “Influence of growth and annealing temperature on the strain and surface morphology of Ge0.995Sn0.005 epilayer,”Applied Surface Science, vol. 340, pp132-137, 2015.
(4) X. Gong, G. Han, F. Bai,S. Su, P. Guo, Y. Yang, R. Cheng, D. Zhang, G. Zhang, C. Xue, B. Cheng, J. Pan, Z. Zhang, E. S. Tok, D. Antoniadis, and Y.-C. Yeo, "Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with sub-400 °C Si2H6 passivation," IEEE Electron Device Letters, vol. 34, no. 3, pp. 339-341, 2013.
(5) S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, “GeSn p-i-n photodetector for all telecommunication bands detection,”Optics Express, vol.19, no.7, pp.6400-6405, 2011.
(6) S. Su, W. Wang, B. Cheng, W. Hu, G. Zhang, C. Xue, Y. Zuo, and Q. Wang, “The contributions of composition and strain to the phonon shift in Ge1-xSnxalloys,”Solid State Communications, vol.151, no.8, pp.647-650, 2011.
(7) X. Gong, G. Han,S. Su, R. Cheng, P. Guo, F. Bai, Y. Yang, Q. Zhou, B. Liu, K. H. Goh, G. Zhang, C. Xue, B. Cheng, and Y.-C. Yeo, “Uniaxially strained germanium-tin (GeSn) Gate-All-Around nanowire PFETS Enabled by a novel top-down nanowire formation technology”,Symposium on VLSI Technology, Kyoto, JP, pp. T34-T35, 2013.
(8) Y. Yang,S. Su, P. Guo, W. Wang, X. Gong, L. Wang, K.L. Low, G. Zhang, C. Xue, B. Cheng, G. Han, Y.-C. Yeo, “Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): technology enablement by germanium-tin (GeSn),”2012 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA USA, Dec. 10-12, pp. 379, 2012.
(9) G. Han,S. Su, C. Zhan, Q. Zhou, Y. Yang, L. Wang, P. Guo, W. Wei, C.P. Wong, Z. X. Shen, B. Cheng, and Y.-C. Yeo, “High-mobility germanium-tin (GeSn) p-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules,”IEEE International Electron Devices Meeting (IEDM),Washington DC,pp. 402, 2011.
(10)G. Han,S. Su, L. Wang, W. Wang, X. Gong, Y. Yan, Ivana, P. Guo, C. Guo, G. Zhang, J. Pan, Z. Zhang, C. Xue, B. Cheng, Y.-C. Yeo, “Strained germanium-tin (GeSn) n-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2interfacial layer,”2012 Symposia on VLSI Technology, pp.97-98, 12-14 June 2012.
(11)X. Gong,S. Su, B. Liu, L.X. Wang, W. Wang, Y. Yang, E. Kong, B. Cheng, G. Han, Y.-C. Yeo, “Towards high performance Ge1-xSnxand In0.7Ga0.3As CMOS: a novel common gate stack featuring sub-400 °C Si2H6passivation, single TaN metal gate, and sub-1.3 nm EOT,”2012 Symposia on VLSI Technology, pp.99-100, 12-14 June 2012.
